IXTM67N10 - параметры транзистора MOSFET, его аналоги, datasheet

IXTM67N10 Datasheet (PDF)

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VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

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VDSS ID25 RDS(on)StandardIXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C6 AT

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VDSS ID25 RDS(on)StandardIXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C6 ATO

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