HFS8N70S datasheet, аналоги, основные параметры

Наименование производителя: HFS8N70S  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 48 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 61 ns

Cossⓘ - Выходная емкость: 105 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm

Тип корпуса: TO-220F

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Аналог (замена) для HFS8N70S

- подборⓘ MOSFET транзистора по параметрам

 

HFS8N70S даташит

 ..1. Size:183K  semihow
 hfs8n70s.pdf pdf_icon

HFS8N70S

Dec 2012 BVDSS = 700 V RDS(on) typ HFS8N70S ID = 7.0 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:307K  semihow
 hfs8n70u.pdf pdf_icon

HFS8N70S

March 2013 BVDSS = 700 V RDS(on) typ = 1.3 HFS8N70U ID = 7.5 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area

 9.1. Size:180K  semihow
 hfs8n60s.pdf pdf_icon

HFS8N70S

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS

 9.2. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N70S

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HFS740, HFS7N80, HFS830, HFS840, HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, 75N75, HFS8N70U, HFS8N80, HFS9N50, HFT1N60S, HFU630, HFW10N60S, HFW11N40, HFW12N60S