All MOSFET. HFS8N70S Datasheet

 

HFS8N70S MOSFET. Datasheet pdf. Equivalent

Type Designator: HFS8N70S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22 nC

Rise Time (tr): 61 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO-220F

HFS8N70S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFS8N70S Datasheet (PDF)

1.1. hfs8n70s.pdf Size:183K _update_mosfet

HFS8N70S
HFS8N70S

Dec 2012 BVDSS = 700 V RDS(on) typ HFS8N70S ID = 7.0 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lo

3.1. hfs8n70u.pdf Size:307K _update_mosfet

HFS8N70S
HFS8N70S

March 2013 BVDSS = 700 V RDS(on) typ = 1.3 HFS8N70U ID = 7.5 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 5.1. hfs8n60s.pdf Size:180K _update_mosfet

HFS8N70S
HFS8N70S

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

5.2. hfs8n60u.pdf Size:308K _update_mosfet

HFS8N70S
HFS8N70S

August 2012 BVDSS = 600 V RDS(on) typ HFS8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are

 5.3. hfs8n65u.pdf Size:307K _update_mosfet

HFS8N70S
HFS8N70S

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

5.4. hfs8n65s.pdf Size:249K _update_mosfet

HFS8N70S
HFS8N70S

Sep 2009 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E

 5.5. hfs8n80.pdf Size:212K _update_mosfet

HFS8N70S
HFS8N70S

Dec 2010 BVDSS = 800 V RDS(on) typ = 1.55 HFS8N80 ID = 8.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) Ex

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