HFS8N70S Datasheet. Specs and Replacement

Type Designator: HFS8N70S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220F

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HFS8N70S datasheet

 ..1. Size:183K  semihow
 hfs8n70s.pdf pdf_icon

HFS8N70S

Dec 2012 BVDSS = 700 V RDS(on) typ HFS8N70S ID = 7.0 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 7.1. Size:307K  semihow
 hfs8n70u.pdf pdf_icon

HFS8N70S

March 2013 BVDSS = 700 V RDS(on) typ = 1.3 HFS8N70U ID = 7.5 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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 hfs8n60s.pdf pdf_icon

HFS8N70S

Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 9.2. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N70S

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

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Detailed specifications: HFS740, HFS7N80, HFS830, HFS840, HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, 75N75, HFS8N70U, HFS8N80, HFS9N50, HFT1N60S, HFU630, HFW10N60S, HFW11N40, HFW12N60S

Keywords - HFS8N70S MOSFET specs

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