SVF2N70MJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SVF2N70MJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 22.27 ns
Cossⓘ - Выходная емкость: 32.2 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.5 Ohm
Тип корпуса: TO251J
SVF2N70MJ Datasheet (PDF)
svf2n70m svf2n70mj svf2n70f svf2n70d svf2n70nf svf2n70mn.pdf
SVF2N70M/MJ/F/D/NF/MN 10A650V N 2SVF2N70M/MJ/ F/D/NF/MN N MOS 123 F-CellTM VDMOS TO-251-3L1132
svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf
SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L
svf2n60nf svf2n60f.pdf
SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3
svf2n60rd svf2n60rm svf2n60rmj.pdf
SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1133
svf2n60m-f-t-d.pdf
SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s
svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS
svf2n60cn svf2n60cm svf2n60cf.pdf
SVF2N60CN/M/F 2A600V N 2SVF2N60CN/M/F N MOS F-CellTM VDMOS 1 31. 2. 3
svf2n60cn svf2n60cnf svf2n60cm svf2n60cmj svf2n60cf svf2n60cd.pdf
SVF2N60CN/NF/M/MJ/F/D 2A600V N 2SVF2N60CN/NF/M/MJ/F/D N MOS 13 F-CellTM VDMOS TO-252-2L13
svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra
svf2n60rdtr svf2n60rm svf2n60rmj.pdf
SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 3
svf2n65f svf2n65n svf2n65mj svf2n65d.pdf
SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS
svf2n65f.pdf
SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
svf2n60m svf2n60f svf2n60t svf2n60d.pdf
SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRC530PBF | F39W60CP
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918