BUK455-100B - описание и поиск аналогов

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS),

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS),

isc N-Channel MOSFET Transistor BUK455-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS),

Philips Semiconductors Product specification PowerMOS transistor BUK455-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipation 125 W Mod

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS),

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor

isc N-Channel MOSFET Transistor BUK455-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor BUK455-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU