BUK553-60B - аналоги, параметры транзистора - Справочник транзисторов

BUK553-60B даташит

..1. Size:91K philips
buk553-60a buk553-60b.pdf pdf_icon

5.1. Size:54K philips
buk553-60a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre

7.1. Size:60K philips
buk553-100b.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

7.2. Size:69K philips
buk553-48c 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 V The device is intended for use in ID Drain current (