Справочник MOSFET. BUZ100S

 

BUZ100S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ100S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 77 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 65 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 615 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для BUZ100S

 

 

BUZ100S Datasheet (PDF)

 ..1. Size:88K  siemens
buz100s spp77n05.pdf

BUZ100S
BUZ100S

BUZ 100 SSPP77N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 100 S 55 V 77 A 0.015 TO-220 AB Q67040-S4001-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

 ..2. Size:107K  infineon
buz100s.pdf

BUZ100S
BUZ100S

BUZ 100SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.015RDS(on) Enhancement modeContinuous drain current 77 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100S P-TO220-3-1 Q67040-S4001-A2 Tub

 0.1. Size:79K  siemens
buz100sl-4.pdf

BUZ100S
BUZ100S

BUZ 100SL-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 100SL-4 55 V 7.4 A 0.023 P-DSO-28 C67078-S. . . .- . . Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 7.4Pulsed drain current

 0.2. Size:105K  infineon
buz100sl.pdf

BUZ100S
BUZ100S

BUZ 100SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.012RDS(on) Enhancement modeContinuous drain current 70 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100SL P-TO220-3-1

 8.1. Size:122K  siemens
buz100.pdf

BUZ100S
BUZ100S

BUZ 100SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 100 50 V 60 A 0.018 TO-220 AB C67078-S1348-A2Maximum RatingsParameter Symbol Values UnitContinuous drain

 8.2. Size:122K  siemens
buz100l.pdf

BUZ100S
BUZ100S

BUZ 100LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Ultra low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 100L 50 V 60 A 0.018 TO-220 AB C67078-S1354-A2Maximum RatingsParameter Symbol Values Uni

 8.3. Size:229K  inchange semiconductor
buz100.pdf

BUZ100S
BUZ100S

isc N-Channel Mosfet Transistor BUZ100FEATURESStatic Drain-Source On-Resistance: R = 0.018(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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