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BUZ45B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ45B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.49 Ohm
   Тип корпуса: TO-204AA

 Аналог (замена) для BUZ45B

 

 

BUZ45B Datasheet (PDF)

 ..1. Size:42K  harris semi
buz45b.pdf

BUZ45B
BUZ45B

BUZ45BSemiconductorData Sheet October 1998 File Number 2259.110A, 500V, 0.500 Ohm, N-Channel Power FeaturesMOSFET 10A, 500V[ /TitleThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500(BUZ45field effect transistor designed for applications such as SOA is Power Dissipation LimitedB)switching regulators, switching converters, motor drivers,

 ..2. Size:222K  inchange semiconductor
buz45b.pdf

BUZ45B
BUZ45B

isc N-Channel Mosfet Transistor BUZ45BFEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

 9.1. Size:287K  st
buz45.pdf

BUZ45B
BUZ45B

 9.2. Size:271K  st
buz45a.pdf

BUZ45B
BUZ45B

 9.3. Size:204K  inchange semiconductor
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BUZ45B
BUZ45B

INCHANGE Semiconductorisc N-Channel Mosfet Transistor BUZ45FEATURESStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

 9.4. Size:222K  inchange semiconductor
buz45a.pdf

BUZ45B
BUZ45B

isc N-Channel Mosfet Transistor BUZ45AFEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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