CS3025A860V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220AB ESD improved capability.0.189(4.80)0.173(4.30) Low gate charge.0.409(10.50)0.378(10.10) 0.114(1.40) Low reverse transfer capacitances.0.098(1.20) 100% single pulse avalanche energy test.0.638(16.0)0.606(15.0)Marking code Mechanical dataG D S Epoxy

N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge

N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge

BRCS3205RA Rev.I Jan.-2019 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC converters

Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS3205 A8 VDSS 60 V General Description ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

CS5Y3205N PD TC=25 100 W 0.8 W/ID VGS=10V,TC=25 18 AID VGS=10V,TC=100 18 AIDM 72 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 55 VRDS on VGS=10V,ID=18A 0.022 VGS

Silicon N-Channel Power MOSFET RCS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto