All MOSFET. CS3205A8 Datasheet

 

CS3205A8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS3205A8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 82 nS

Drain-Source Capacitance (Cd): 750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO-220AB

CS3205A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS3205A8 Datasheet (PDF)

1.1. cs3205a8.pdf Size:2855K _update_mosfet

CS3205A8
CS3205A8

CS3025A8 60V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220AB • ESD improved capability. 0.189(4.80) 0.173(4.30) • Low gate charge. 0.409(10.50) 0.378(10.10) 0.114(1.40) • Low reverse transfer capacitances. 0.098(1.20) • 100% single pulse avalanche energy test. 0.638(16.0) 0.606(15.0) Marking code ■ Mechanical data G D S • Epoxy

4.1. cs3205.pdf Size:66K _update_mosfet

CS3205A8

CS5Y3205型N沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 100 W 线性降低系数 0.8 W/℃ ID (VGS=10V,TC=25℃) 18 A 极 ID (VGS=10V,TC=100℃) 18 A 限 IDM 72 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 1.25 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 55 V RDS on) VGS=10V,ID=18A 0.022 Ω ( VGS

4.2. cs3205b8.pdf Size:429K _update_mosfet

CS3205A8
CS3205A8

Silicon N-Channel Power MOSFET R ○ CS3205 B8 General Description: VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.3. cs3205 a8.pdf Size:427K _crhj

CS3205A8
CS3205A8

Silicon N-Channel Power MOSFET R ○ CS3205 A8 VDSS 60 V General Description: ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25℃) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

4.4. cs3205 b8.pdf Size:308K _crhj

CS3205A8
CS3205A8

Silicon N-Channel Power MOSFET R ○ CS3205 B8 General Description: VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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