CS4N65A8HD
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS4N65A8HD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 75
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 14.5
nC
trⓘ -
Время нарастания: 11
ns
Cossⓘ - Выходная емкость: 55
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5
Ohm
Тип корпуса:
TO-220AB
Аналог (замена) для CS4N65A8HD
CS4N65A8HD
Datasheet (PDF)
..1. Size:226K wuxi china
cs4n65a8hd.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
7.1. Size:677K blue-rocket-elect
brcs4n65aa.pdf 
BRCS4N65AA Rev.D Nov.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici
7.2. Size:353K wuxi china
cs4n65a4tdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.3. Size:596K wuxi china
cs4n65a4hdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
7.4. Size:231K wuxi china
cs4n65a3hd.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
7.5. Size:226K wuxi china
cs4n65a4r.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
7.6. Size:353K wuxi china
cs4n65a3hdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
7.7. Size:220K wuxi china
cs4n65a3r.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
7.8. Size:324K wuxi china
cs4n65a3hd1-g.pdf 
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto
7.9. Size:237K wuxi china
cs4n65a3tdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
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