All MOSFET. CS4N65A8HD Datasheet

 

CS4N65A8HD MOSFET. Datasheet pdf. Equivalent

Type Designator: CS4N65A8HD

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14.5 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO-220AB

CS4N65A8HD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS4N65A8HD Datasheet (PDF)

1.1. cs4n65a8hd.pdf Size:345K _update_mosfet

CS4N65A8HD CS4N65A8HD

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description： VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.1. cs4n65a3hdy.pdf Size:353K _update_mosfet

CS4N65A8HD CS4N65A8HD

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description： VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.2. cs4n65a3tdy.pdf Size:237K _update_mosfet

CS4N65A8HD CS4N65A8HD

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description： VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 3.3. cs4n65a4tdy.pdf Size:353K _update_mosfet

CS4N65A8HD CS4N65A8HD

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description： VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

3.4. cs4n65a4hdy.pdf Size:596K _update_mosfet

CS4N65A8HD CS4N65A8HD

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description： VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 3.5. cs4n65a3hd.pdf Size:354K _update_mosfet

CS4N65A8HD CS4N65A8HD

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description： VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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