CS5N5210P PD TC=25 125 W 1.0 W/ID VGS=-10V,TC=25 -31 AID VGS=-10V,TC=100 -19 AIDM -124 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 1.0 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-19A 0.06

N RN-CHANNEL MOSFET JCS5N50T Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS Rdson-max 1.6 @Vgs=10V 15 nC Qg-typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS5N50T \ Package ;NSpe MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson@Vgs=10V 1.6&! Qg 15 nC APPLICATIONS (u High efficiency switch _sQ5un

N RN-CHANNEL MOSFET JCS5N50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 14nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

BRCS5N50YU Rev.A Aug.-2023 DATA SHEET / Descriptions DFN88-4L N Dual N-CHANNEL MOSFET in a DFN88-4L Plastic Package. / Features V (V)=500V I =5A DS DRDS(ON)@10V

CS5N50 N PD TC=25 74 W 0.59 W/ ID VGS=10V,TC=25 5.0 A ID VGS=10V,TC=100 3.2 A IDM 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.7 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=3A 1.4