CS630FA9H - параметры транзистора MOSFET, его аналоги, datasheet

CS630FA9H Datasheet (PDF)

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Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

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BRCS630FA Rev.A Sep.-2023 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features V =200VI =9A DS DRDS(on)@10V0.4(Type.0.35) HF Product. / Applications LED Networking,Load Switch,LED applications.

Другие MOSFET... CS60N04A4 , CS6215PBF , CS630 , CS630A3H , CS630A4H , CS630A8H , CS630D , CS630F , IRF1407 , CS634F , CS640 , CS640A0H , CS640A8H , CS640F , CS640FA9H , CS64N90 , CS64N90B .