Справочник MOSFET. CS9N90FA9D

 

CS9N90FA9D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS9N90FA9D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 60 W
   Предельно допустимое напряжение сток-исток |Uds|: 900 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 62 nC
   Время нарастания (tr): 8 ns
   Выходная емкость (Cd): 205 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.3 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для CS9N90FA9D

 

 

CS9N90FA9D Datasheet (PDF)

 ..1. Size:771K  wuxi china
cs9n90fa9d.pdf

CS9N90FA9D
CS9N90FA9D

Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:1487K  jilin sino
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf

CS9N90FA9D
CS9N90FA9D

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

 7.2. Size:898K  jilin sino
jcs9n90ft.pdf

CS9N90FA9D
CS9N90FA9D

N RN-CHANNEL MOSFET JCS9N90FT Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson 1.35 @Vgs=10VQg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

 7.3. Size:771K  crhj
cs9n90f a9d.pdf

CS9N90FA9D
CS9N90FA9D

Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.4. Size:620K  convert
cs9n90f cs9n90p cs9n90w cs9n90v.pdf

CS9N90FA9D
CS9N90FA9D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N90F, CS9N90P,CS9N90W,CS9N90V900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N90F TO-220

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