CS9N90FA9D MOSFET PDF: N-Ch, 900V, 9A. Datasheet. Full specification with pinout and replacement list

CS9N90FA9D Specs and Replacement

   Type Designator: CS9N90FA9D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220F

CS9N90FA9D substitution

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CS9N90FA9D datasheet

..1. Size:771K wuxi china
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Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

7.1. Size:1487K jilin sino
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf pdf_icon

N R N-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED ... See More ⇒

7.2. Size:898K jilin sino
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N R N-CHANNEL MOSFET JCS9N90FT Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson 1.35 @Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power... See More ⇒

7.3. Size:771K crhj
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