All MOSFET. CS9N90FA9D Datasheet

 

CS9N90FA9D MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS9N90FA9D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220F

 CS9N90FA9D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS9N90FA9D Datasheet (PDF)

 ..1. Size:771K  wuxi china
 cs9n90fa9d.pdf

CS9N90FA9D CS9N90FA9D

Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:1487K  jilin sino
 jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf

CS9N90FA9D CS9N90FA9D

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

 7.2. Size:898K  jilin sino
 jcs9n90ft.pdf

CS9N90FA9D CS9N90FA9D

N RN-CHANNEL MOSFET JCS9N90FT Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson 1.35 @Vgs=10VQg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

 7.3. Size:771K  crhj
 cs9n90f a9d.pdf

CS9N90FA9D CS9N90FA9D

Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.4. Size:620K  convert
 cs9n90f cs9n90p cs9n90w cs9n90v.pdf

CS9N90FA9D CS9N90FA9D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N90F, CS9N90P,CS9N90W,CS9N90V900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N90F TO-220

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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