NDS9947 - описание и поиск аналогов

 

NDS9947 - Аналоги. Основные параметры


   Наименование производителя: NDS9947
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SO8

 Аналог (замена) для NDS9947

 

NDS9947 технические параметры

 ..1. Size:141K  fairchild semi
nds9947.pdfpdf_icon

NDS9947

May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra

 8.1. Size:258K  fairchild semi
nds9948.pdfpdf_icon

NDS9947

January 2010 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

 8.2. Size:77K  fairchild semi
nds9945.pdfpdf_icon

NDS9947

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to

 8.3. Size:222K  onsemi
nds9948.pdfpdf_icon

NDS9947

NDS9948 Dual 60V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V ON Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management Low gate charge (9nC typical) applications requi

Другие MOSFET... NDS9400A , NDS9407 , NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , K2611 , NDS9948 , NDS9953A , NDS9955 , NDS9956A , NDS9957 , NDS9959 , NDT014 , NDT014L .

 

 
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