NDS9947 Datasheet. Specs and Replacement

Type Designator: NDS9947  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SO8

  📄📄 Copy 

NDS9947 substitution

- MOSFET ⓘ Cross-Reference Search

 

NDS9947 datasheet

 ..1. Size:141K  fairchild semi
nds9947.pdf pdf_icon

NDS9947

May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra... See More ⇒

 8.1. Size:258K  fairchild semi
nds9948.pdf pdf_icon

NDS9947

January 2010 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ... See More ⇒

 8.2. Size:77K  fairchild semi
nds9945.pdf pdf_icon

NDS9947

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to ... See More ⇒

 8.3. Size:222K  onsemi
nds9948.pdf pdf_icon

NDS9947

NDS9948 Dual 60V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V ON Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management Low gate charge (9nC typical) applications requi... See More ⇒

Detailed specifications: NDS9400A, NDS9407, NDS9410A, NDS9435A, NDS9925A, NDS9933A, NDS9936, NDS9945, SI2302, NDS9948, NDS9953A, NDS9955, NDS9956A, NDS9957, NDS9959, NDT014, NDT014L

Keywords - NDS9947 MOSFET specs

 NDS9947 cross reference

 NDS9947 equivalent finder

 NDS9947 pdf lookup

 NDS9947 substitution

 NDS9947 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility