All MOSFET. NDS9947 Datasheet

 

NDS9947 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDS9947
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.6 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8

 NDS9947 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDS9947 Datasheet (PDF)

 ..1. Size:141K  fairchild semi
 nds9947.pdf

NDS9947 NDS9947

May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra

 8.1. Size:258K  fairchild semi
 nds9948.pdf

NDS9947 NDS9947

January 2010NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

 8.2. Size:77K  fairchild semi
 nds9945.pdf

NDS9947 NDS9947

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 N-Channel enhancement mode power field effect3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.200 @ VGS = 4.5 V.cell density, DMOS technology. This very high densityprocess is especially tailored to

 8.3. Size:222K  onsemi
 nds9948.pdf

NDS9947 NDS9947

NDS9948 Dual 60V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 VON Semiconductors advanced PowerTrenchRDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management Low gate charge (9nC typical)applications requi

 8.4. Size:915K  cn vbsemi
 nds9945-nl.pdf

NDS9947 NDS9947

NDS9945-NLwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

 8.5. Size:868K  cn vbsemi
 nds9948-nl.pdf

NDS9947 NDS9947

NDS9948-NLwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

Datasheet: NDS9400A , NDS9407 , NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , IPSA70R360P7S , NDS9948 , NDS9953A , NDS9955 , NDS9956A , NDS9957 , NDS9959 , NDT014 , NDT014L .

 

 
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