SMD Type MOSFETICN-Channel 30-V (D-S) MOSFETSI2306 (KI2306)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1 2+0.02+0.1D 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1. Gate2. SourceS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-S

SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode MOSFETKI2306SOT-23-3Unit: mm+0.22.9-0.2 Features0.4+0.1-0.053 @VGS=10V RDS(ON)=0.030 RDS(ON)=0.035@VGS=4.5VDS(ON) GS R =0.052@V =2.5V120.95+0.1-0.1 0.1+0.05-0.011.9+0.2-0.2D 1.Base1. Gate2.Emitter2. Source3. Drain3.collectorG S Absolute Maximum Ratings

SMD Type ICSMD Type TransistorsN-Channel 30-V (D-S) MOSFETKI2306DSSOT-23Unit: mm+0.12.9-0.1Features +0.10.4-0.13TrenchFET Power MOSFET100% Rg Tested12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-source voltage VDS 30 VGate-source vol

KI2301P-Channel 20-V(D-S) MosfetDESCRIPTION DThe KI2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-20V64m 89 m

SMD Type MOSFETProduct specificationKI2305SOT-23-3Unit: mm2.9+0.2-0.2 Features0.4+0.1-0.053 VDS (V) = -20V RDS(ON)0.065 (VGS = -4.5V) RDS(ON)0.100 (VGS = -2.5V)12 RDS(ON)0.250 (VGS = -1.8V)+0.10.95-0.1 0.1+0.05-0.01+0.21.9-0.2D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Sym

SMD Type ICSMD Type MOSFESMD Type MOSFETSMD Type MOSFETSMD Type MOSFETSMD Type ICProduct specification KI2303DSSOT-23Unit: mm+0.12.9-0.1 Features+0.10.4-0.1 VDS (V) = -30V 3 ID = -1.4 A RDS(ON)

SMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD Type MOSFETSMD Type MOSFESMD Type MOSFETSMD Type MOSFETSMD Type MOSFETSMD Type ICProduct specification KI2307DSSOT-23Unit: mm+0.12.9-0.1 Features+0.10.4-0.13 VDS=-30V, rDS(on)=0.080,VGS=-10V,ID=-3A VDS=-30V, rDS(on)=0.140,VGS=-4.5V,ID=-2.5A1 2+0.1+0.050.95-0.1 0.1

SMD Type ICSMD Type MOSFESMD Type MOSFETSMD Type MOSFETSMD Type MOSFETProduct specification KI2301DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS (V) = -20V RDS(ON) 100m (VGS = -4.5V)1 2+0.1+0.05 RDS(ON) 150m (VGS = -2.5V) 0.95-0.1 0.1-0.01+0.11.9-0.1D 1.Base1.Base1. Gate2.Emitter2.Emitter2. Source3.

SMD TypeSMD Type ICProduct specificationKI2302DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 0.085@VGS=4.5V ,ID=3.6A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(on)= 0.115@VGS=2.5V ,ID= 3.1A+0.11.9-0.1G 13 D1.Base1. GateS 2 2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter

SMD Type ICSMD Type TransistorsP-Channel 30-V (D-S) MOSFETKI2307BDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3TrenchFET Power MOSFETRoHS Compliant12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -30 V

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302 (KI2302)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SMD Type MOSFETSMD TypeP-Channel MOSFETKI2305DS SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = -20V RDS(ON)0.052 (VGS = -4.5V)1 2 RDS(ON)0.071 (VGS = -2.5V)D +0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON)0.108 (VGS = -1.8V) +0.11.9 -0.11. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Paramet

SMD Type TransistorsP-Channel 2.5-V (G-S) MOSFETKI2301BDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13Features12RoH Lead (Pb)-Free Version is RoHS Compliant.+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -20 VGate-

SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode Field Effect TransistorKI2300(SI2300)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETSI2300 (KI2300)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS=20V3ID=5.0ARDS(ON)=25m @VGS=4.5V,ID=5.0ARDS(ON)=35m @VGS=2.5V,ID=4.0A1 2+0.02+0.10.15 -0.020.95 -0.1RDS(ON)=55m @VGS=1.8V,ID=1.0A+0.11.9 -0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type MOSFETP-Channel MOSFETKI2305SOT-23-3Unit: mm2.9+0.2-0.2 Features0.4+0.1-0.053 VDS (V) = -20V RDS(ON)0.065 (VGS = -4.5V) RDS(ON)0.100 (VGS = -2.5V)12 RDS(ON)0.250 (VGS = -1.8V)+0.10.95-0.1 0.1+0.05-0.01+0.21.9-0.2D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol R

SMD Type TransistorsP-Channel, 30-V (G-S) MOSFETKI2303BDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3RoH Lead (Pb)-Free Version is RoHS Compliant.12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -30 VGate-

SMD Type MOSFETP-Channel Enhancement MOSFET SI2303 (KI2303)SOT-23-3Unit: mm+0.22.9-0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type MOSFETP-Channel Enhancement MOSFET KI2301TSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-2.8 A1 2 RDS(ON) 115m (VGS =-4.5V)+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 160m (VGS =-2.5V)1.Gate2.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2+0.02 RDS(ON) 160m (VGS = 10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 220m (VGS = 4.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramete

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301 (KI2301) Features VDS (V) =-20V RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20

SMD Type TransistorsP-Channel 60-V (D-S) MOSFETKI2309DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features312+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-source voltage VDS -60 VGate-source voltage VGS 20 VContinuous drain current (TJ = 150 )

SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 140m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25

SMD Type DiodesSMD Type MOSFETSMD Type MOSFETN-Channel MOSFETKI2302DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 0.085@VGS=4.5V ,ID=3.6A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(on)= 0.115@VGS=2.5V ,ID= 3.1A+0.11.9-0.1G 13 D1.Base1. GateS 2 2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings

SMD Type TransistorsN-Channel 30-V (D-S) MOSFETKI2304DSSOT-23Unit: mm+0.12.9-0.1Features+0.10.4-0.1312+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 ) *

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin