NVD3055-094 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVD3055-094
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 32.3 ns
Cossⓘ - Выходная емкость: 107 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.094 Ohm
Тип корпуса: DPAK
Аналог (замена) для NVD3055-094
NVD3055-094 Datasheet (PDF)
nvd3055-094.pdf

NTD3055-094, NVD3055-094Power MOSFET12 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower and Tighter VSD60 V 94 mW 12 A Lower Diode Reverse Recovery Time Low
ntd3055-094 nvd3055-094.pdf

NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D
ntd3055-150 nvd3055-150.pdf

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements
nvd3055-150.pdf

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requireme
Другие MOSFET... NVB5860NL , NVB60N06 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , CS150N03A8 , NVD3055-150 , NVD3055L170 , NVD4804N , NVD4805N , NVD4806N , NVD4808N , NVD4809N , NVD4810N .
History: AP9970GW-HF | HGS098N10A | 2SK2771-01R | NCEA65NF036T4 | HM7000 | TPP65R380C | TSM2N70CZ
History: AP9970GW-HF | HGS098N10A | 2SK2771-01R | NCEA65NF036T4 | HM7000 | TPP65R380C | TSM2N70CZ



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