Справочник MOSFET. NVMFD5853N

 

NVMFD5853N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVMFD5853N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: DFN8

 Аналог (замена) для NVMFD5853N

 

 

NVMFD5853N Datasheet (PDF)

 ..1. Size:120K  onsemi
 nvmfd5853n.pdf

NVMFD5853N NVMFD5853N

NVMFD5853N,NVMFD5853NWFPower MOSFET40 V, 10 mW, 53 A, Dual N-Channel, DualSO-8FLFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

 ..2. Size:202K  onsemi
 nvmfd5853n nvmfd5853nwf.pdf

NVMFD5853N NVMFD5853N

NVMFD5853N,NVMFD5853NWFMOSFET Dual N-Channel,Dual SO-8FL40 V, 10 mW, 53 Ahttp://onsemi.comFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

 0.1. Size:75K  onsemi
 nvmfd5853nl.pdf

NVMFD5853N NVMFD5853N

NVMFD5853NLPower MOSFET40 V, 10 mW, 34 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical10 mW @ 10 VInspection40 V 34 A A

 6.1. Size:78K  onsemi
 nvmfd5852nl.pdf

NVMFD5853N NVMFD5853N

NVMFD5852NLPower MOSFET40 V, 6.9 mW, 44 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical6.9 mW @ 10 VInspection40 V 44 A

 7.1. Size:199K  onsemi
 nvmfd5877nl.pdf

NVMFD5853N NVMFD5853N

NVMFD5877NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 39 mW, 17 Ahttp://onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical60 V 17 AInspection60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap

 7.2. Size:76K  onsemi
 nvmfd5873nl.pdf

NVMFD5853N NVMFD5853N

NVMFD5873NLPower MOSFET60 V, 13 mW, 58 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical13 mW @ 10 VInspection60 V 58 A16.5

 7.3. Size:201K  onsemi
 nvmfd5875nl.pdf

NVMFD5853N NVMFD5853N

NVMFD5875NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 33 mW, 22 Awww.onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical60 V 22 A45 mW @ 4.5 VInspection AEC-Q101 Qualified and PPAP Capabl

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