NVMFD5853N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVMFD5853N
Marking Code: 5853N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
DFN8
NVMFD5853N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVMFD5853N
Datasheet (PDF)
..1. Size:120K onsemi
nvmfd5853n.pdf 
NVMFD5853N,NVMFD5853NWFPower MOSFET40 V, 10 mW, 53 A, Dual N-Channel, DualSO-8FLFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl
..2. Size:202K onsemi
nvmfd5853n nvmfd5853nwf.pdf
NVMFD5853N,NVMFD5853NWFMOSFET Dual N-Channel,Dual SO-8FL40 V, 10 mW, 53 Ahttp://onsemi.comFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable
0.1. Size:75K onsemi
nvmfd5853nl.pdf
NVMFD5853NLPower MOSFET40 V, 10 mW, 34 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical10 mW @ 10 VInspection40 V 34 A A
6.1. Size:78K onsemi
nvmfd5852nl.pdf
NVMFD5852NLPower MOSFET40 V, 6.9 mW, 44 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical6.9 mW @ 10 VInspection40 V 44 A
7.1. Size:199K onsemi
nvmfd5877nl.pdf
NVMFD5877NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 39 mW, 17 Ahttp://onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical60 V 17 AInspection60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap
7.2. Size:76K onsemi
nvmfd5873nl.pdf
NVMFD5873NLPower MOSFET60 V, 13 mW, 58 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical13 mW @ 10 VInspection60 V 58 A16.5
7.3. Size:201K onsemi
nvmfd5875nl.pdf
NVMFD5875NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 33 mW, 22 Awww.onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical60 V 22 A45 mW @ 4.5 VInspection AEC-Q101 Qualified and PPAP Capabl
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