NVMD3P03 Datasheet. Specs and Replacement

Type Designator: NVMD3P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOIC-8

NVMD3P03 substitution

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NVMD3P03 datasheet

 ..1. Size:106K  onsemi
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NVMD3P03

NTMD3P03, NVMD3P03 Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8 Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http //onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature VDSS RDS(ON) Typ ID Max ... See More ⇒

 ..2. Size:110K  onsemi
 ntmd3p03 nvmd3p03.pdf pdf_icon

NVMD3P03

NTMD3P03, NVMD3P03 Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8 Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http //onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature VDSS RDS(ON) Typ ID Max ... See More ⇒

Detailed specifications: NVJD4158C, NVJD4401N, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, 8205A, NVMD4N03, NVMD6N03R2G, NVMD6N04, NVMFD5483NL, NVMFD5485NL, NVMFD5489NL, NVMFD5852NL, NVMFD5853N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.