NVMD4N03 Datasheet. Specs and Replacement

Type Designator: NVMD4N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOIC-8

NVMD4N03 substitution

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NVMD4N03 datasheet

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NVMD4N03

NTMD4N03, NVMD4N03 Power MOSFET 4 A, 30 V, N-Channel SO-8 Dual Features Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provides http //onsemi.com Higher Efficiency and Extends Battery Life - RDS(on) = 0.048 W, VGS = 10 V (Typ) - RDS(on) = 0.065 W, VGS = 4.5 V (Typ) VDSS RDS(ON) Typ ID Max Miniature SO-8 Surface Mount Package - S... See More ⇒

Detailed specifications: NVJD4401N, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03, 7N65, NVMD6N03R2G, NVMD6N04, NVMFD5483NL, NVMFD5485NL, NVMFD5489NL, NVMFD5852NL, NVMFD5853N, NVMFD5853NL

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