JMSL0620AGE PDF and Equivalents Search

 

JMSL0620AGE Specs and Replacement


   Type Designator: JMSL0620AGE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN5X6-8L
 

 JMSL0620AGE substitution

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JMSL0620AGE datasheet

 ..1. Size:400K  jiejie micro
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JMSL0620AGE

JMSL0620AGE 60V 16m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 31 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 16.0 m RDS(ON)_Typ (@ VGS = 4.5V) 23 m Pb-free Lead Plating, Hal... See More ⇒

 0.1. Size:400K  jiejie micro
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JMSL0620AGE

JMSL0620AGEQ 60V 16m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 32 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 16.0 m RDS(ON)_Typ (@ VGS = 4.5V) 23 m Pb-free Lead Plating, Ha... See More ⇒

 4.1. Size:305K  jiejie micro
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JMSL0620AGE

JMSL0620AGDEQ 60V 18m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 18.0 m RDS(ON)_Typ (@ VGS = 4.5V) 25 m Pb-free Lead Plati... See More ⇒

 4.2. Size:318K  jiejie micro
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JMSL0620AGE

JMSL0620AGDE 60V 18m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low ON Resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V) 18.0 m RDS(ON)_Typ (@ VGS = 4.5V) 25 m Pb-free Lead Platin... See More ⇒

Detailed specifications: JMSL0615AGDQ , JMSL0615AP , JMSL0615APD , JMSL0615AUD , JMSL0615AV , JMSL0615PGDQ , JMSL0620AGDE , JMSL0620AGDEQ , IRF1405 , JMSL0620AGEQ , JMSL0620AUE , JMSL0630AG , JMSL0630AGD , JMSL0630AU , JMSL0803MG , JMSL1070AK , JMSL1070APD .

History: 2SK764 | JMTG100N06D | JMTG080N04D | JMSL1008MKQ | AOD380A60C | AOD32326

Keywords - JMSL0620AGE MOSFET specs

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