APT20M18B2VRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT20M18B2VRG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 2320 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT20M18B2VRG
APT20M18B2VRG Datasheet (PDF)
apt20m18b2vrg apt20m18lvrg.pdf

APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV
apt20m18b2vr.pdf

APT20M18B2VRAPT20M18LVR200V 100A 0.018WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt20m18b2vr.pdf

isc N-Channel MOSFET Transistor APT20M18B2VRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt20m18b2vfrg apt20m18lvfrg.pdf

APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
Другие MOSFET... APT20M11JLL , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG , APT20M16B2LLG , APT20M16LFLLG , APT20M16LLLG , APT20M18B2VFRG , IRFB4110 , APT20M18LVFRG , APT20M18LVRG , APT20M20B2FLLG , APT20M20B2LLG , APT20M20LFLLG , APT20M20LLLG , APT20M34BFLLG , APT20M34BLLG .
History: NCE65N800D | MM15N050P | 2SK2845 | HGD045NE4SL | DMN5L06W-7 | TSM2NB60CI | SVD50N06MJ
History: NCE65N800D | MM15N050P | 2SK2845 | HGD045NE4SL | DMN5L06W-7 | TSM2NB60CI | SVD50N06MJ



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