APT20M18B2VRG MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M18B2VRG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 625 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 330 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 2320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: T-MAX
APT20M18B2VRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M18B2VRG Datasheet (PDF)
1.1. apt20m18b2vrg apt20m18lvrg.pdf 
Size:159K _update_mosfet
APT20M18B2VR A20M18LVR Ω 200V 100A 0.018Ω Ω Ω Ω B2VR POWER MOS V® MOSFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LV
1.2. apt20m18b2vfrg apt20m18lvfrg.pdf Size:152K _update_mosfet
APT20M18B2VFR A20M18LVFR Ω 200V 100A 0.018Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
1.3. apt20m18b2vr.pdf Size:38K _apt
APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificati
1.4. apt20m18b2vfr.pdf Size:39K _apt
APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical
Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
