BUK457-400B. Аналоги и основные параметры
Наименование производителя: BUK457-400B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
Тип корпуса: TO220AB
Аналог (замена) для BUK457-400B
- подборⓘ MOSFET транзистора по параметрам
BUK457-400B даташит
4.2. Size:229K inchange semiconductor
buk457-400.pdf 
isc N-Channel MOSFET Transistor BUK457-400A/B DESCRIPTION Drain Source Voltage- V =400V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.1. Size:54K philips
buk456-60a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor
9.2. Size:57K philips
buk453-100a-b 2.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK453-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS),
9.3. Size:54K philips
buk452-60a-b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 15 14 A (SMPS), motor
9.4. Size:55K philips
buk456-100b.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 34 32 A (SMPS),
9.5. Size:53K philips
buk456-100a-b 2.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 34 32 A (SMPS),
9.6. Size:54K philips
buk455-200a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS),
9.7. Size:64K philips
buk454-800a-b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK454-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK454 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.4 2.0 A (SMPS)
9.8. Size:56K philips
buk452-100a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 11 10 A (SMPS),
9.9. Size:54K philips
buk453-60a-b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor
9.10. Size:54K philips
buk455-100a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS),
9.11. Size:50K philips
buk456-200a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (SMPS),
9.12. Size:71K philips
buk455-60h 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK455-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipation 125 W Mod
9.13. Size:51K philips
buk454-60h 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK454-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A automotive applications, Switched Ptot Total power dissipation 125 W Mod
9.14. Size:49K philips
buk456-800a-b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS),
9.15. Size:58K philips
buk454-200a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power diss
9.16. Size:48K philips
buk451-100a-b 1.pdf 
Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK451 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 3.0 3.0 A (S
9.17. Size:67K philips
buk456-60a-b 2.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor
9.18. Size:53K philips
buk455-200b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS),
9.19. Size:79K philips
buk455.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor
9.20. Size:57K philips
buk456-60h 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 60 A Automotive and general purpose Ptot Total power dissipation 150 W switch
9.21. Size:61K philips
buk452-100b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 11 10 A (SMPS),
9.22. Size:56K philips
buk455-60a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor
9.23. Size:54K philips
buk452-60a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 15 14 A (SMPS), motor
9.24. Size:54K philips
buk453-60a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor
9.25. Size:56K philips
buk455-60a-b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor
9.26. Size:48K philips
buk455-100b.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS),
9.27. Size:228K inchange semiconductor
buk456-100.pdf 
isc N-Channel MOSFET Transistor BUK456-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.28. Size:229K inchange semiconductor
buk455-60.pdf 
isc N-Channel MOSFET Transistor BUK455-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM
9.29. Size:229K inchange semiconductor
buk456-200.pdf 
isc N-Channel MOSFET Transistor BUK456-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.30. Size:228K inchange semiconductor
buk455-200.pdf 
isc N-Channel MOSFET Transistor BUK455-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.31. Size:228K inchange semiconductor
buk452-60.pdf 
isc N-Channel MOSFET Transistor BUK452-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM
9.32. Size:228K inchange semiconductor
buk452-100.pdf 
isc N-Channel MOSFET Transistor BUK452-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.33. Size:228K inchange semiconductor
buk455-100.pdf 
isc N-Channel MOSFET Transistor BUK455-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.34. Size:229K inchange semiconductor
buk453-60.pdf 
isc N-Channel MOSFET Transistor BUK453-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM
9.35. Size:229K inchange semiconductor
buk456-800.pdf 
isc N-Channel MOSFET Transistor BUK456-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.36. Size:229K inchange semiconductor
buk454-800.pdf 
isc N-Channel MOSFET Transistor BUK454-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.37. Size:228K inchange semiconductor
buk454-200.pdf 
isc N-Channel MOSFET Transistor BUK454-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.38. Size:228K inchange semiconductor
buk453-100.pdf 
isc N-Channel MOSFET Transistor BUK453-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU
9.39. Size:229K inchange semiconductor
buk456-60.pdf 
isc N-Channel MOSFET Transistor BUK456-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM
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History: SID9971
| AP3N2R8H
| SES760
| HY1001P
| BUK457-400A
| 2SJ0582
| NCE60R360
