APT56M60B2 - параметры транзистора MOSFET, его аналоги, datasheet

APT56M60B2 Datasheet (PDF)

..1. Size:219K microsemi
apt56m60b2 apt56m60l.pdf pdf_icon

APT56M60B2 APT56M60L 600V, 60A, 0.11 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and cap

..2. Size:375K inchange semiconductor
apt56m60b2.pdf pdf_icon

isc N-Channel MOSFET Transistor APT56M60B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:255K inchange semiconductor
apt56m60l.pdf pdf_icon

isc N-Channel MOSFET Transistor APT56M60LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.1. Size:187K microsemi
apt56m50b2 apt56m50l.pdf pdf_icon

APT56M50B2 APT56M50L 500V, 56A, 0.10 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu-facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap