APT56M60B2 PDF Specs and Replacement
Type Designator: APT56M60B2
Type of Transistor: MOFETS
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1040 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1040 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-247
APT56M60B2 substitution
APT56M60B2 PDF Specs
apt56m60b2 apt56m60l.pdf
APT56M60B2 APT56M60L 600V, 60A, 0.11 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and cap... See More ⇒
apt56m60b2.pdf
isc N-Channel MOSFET Transistor APT56M60B2 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
apt56m60l.pdf
isc N-Channel MOSFET Transistor APT56M60L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
apt56m50b2 apt56m50l.pdf
APT56M50B2 APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu- facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap... See More ⇒
Detailed specifications: APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 , APT56F60L , APT56M50B2 , APT56M50L , 2SK3878 , APT56M60L , APT58F50J , APT58M50J , APT58M50JCU2 , APT58M50JCU3 , APT58M80J , APT5F100K , APT6010B2FLLG .
Keywords - APT56M60B2 MOSFET specs
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