APT56M60L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT56M60L
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1040 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 1040 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT56M60L
APT56M60L Datasheet (PDF)
apt56m60b2 apt56m60l.pdf

APT56M60B2 APT56M60L 600V, 60A, 0.11 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and cap
apt56m60l.pdf

isc N-Channel MOSFET Transistor APT56M60LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt56m60b2.pdf

isc N-Channel MOSFET Transistor APT56M60B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt56m50b2 apt56m50l.pdf

APT56M50B2 APT56M50L 500V, 56A, 0.10 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu-facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap
Другие MOSFET... APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 , APT56F60L , APT56M50B2 , APT56M50L , APT56M60B2 , 12N60 , APT58F50J , APT58M50J , APT58M50JCU2 , APT58M50JCU3 , APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG .
History: IRF7707 | INK0102AM1 | SI1441EDH | MIC94053YC6TR | 2SK2329S | NCE65N330K | AP3989R
History: IRF7707 | INK0102AM1 | SI1441EDH | MIC94053YC6TR | 2SK2329S | NCE65N330K | AP3989R



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