APT56M60L Datasheet. Specs and Replacement

Type Designator: APT56M60L  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1040 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 1040 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-264

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APT56M60L datasheet

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APT56M60L

APT56M60B2 APT56M60L 600V, 60A, 0.11 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and cap... See More ⇒

 ..2. Size:255K  inchange semiconductor
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APT56M60L

isc N-Channel MOSFET Transistor APT56M60L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 6.1. Size:375K  inchange semiconductor
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APT56M60L

isc N-Channel MOSFET Transistor APT56M60B2 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 8.1. Size:187K  microsemi
 apt56m50b2 apt56m50l.pdf pdf_icon

APT56M60L

APT56M50B2 APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu- facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap... See More ⇒

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Detailed specifications: APT5570AN, APT56F50B2, APT56F50L, APT56F60B2, APT56F60L, APT56M50B2, APT56M50L, APT56M60B2, AON7408, APT58F50J, APT58M50J, APT58M50JCU2, APT58M50JCU3, APT58M80J, APT5F100K, APT6010B2FLLG, APT6010B2LLG

Keywords - APT56M60L MOSFET specs

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