APT58M50J Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT58M50J
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 540 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1455 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: SOT-227
- подбор MOSFET транзистора по параметрам
APT58M50J Datasheet (PDF)
apt58m50j.pdf

APT58M50J 500V, 58A, 0.065 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g
apt58m50jcu3.pdf

APT58M50JCU3VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D
apt58m50jcu2.pdf

APT58M50JCU2VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch
apt58m80j.pdf

APT58M80J 800V, 60A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AM3531C | BUZ172 | SIR424DP | AK4N65S | STB7NK80ZT4 | LSG65R290HF | 2SK3152
History: AM3531C | BUZ172 | SIR424DP | AK4N65S | STB7NK80ZT4 | LSG65R290HF | 2SK3152



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