Справочник MOSFET. APT58M50J

 

APT58M50J Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT58M50J
   Тип транзистора: MOFETS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 540 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 1455 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SOT-227
     - подбор MOSFET транзистора по параметрам

 

APT58M50J Datasheet (PDF)

 ..1. Size:119K  microsemi
apt58m50j.pdfpdf_icon

APT58M50J

APT58M50J 500V, 58A, 0.065 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g

 0.1. Size:108K  microsemi
apt58m50jcu3.pdfpdf_icon

APT58M50J

APT58M50JCU3VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D

 0.2. Size:108K  microsemi
apt58m50jcu2.pdfpdf_icon

APT58M50J

APT58M50JCU2VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25C MOSFET + SiC chopper diode ID = 58A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch

 8.1. Size:209K  microsemi
apt58m80j.pdfpdf_icon

APT58M50J

APT58M80J 800V, 60A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

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History: AM3531C | BUZ172 | SIR424DP | AK4N65S | STB7NK80ZT4 | LSG65R290HF | 2SK3152

 

 
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