APT58M50J Datasheet. Specs and Replacement

Type Designator: APT58M50J  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1455 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT-227

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APT58M50J datasheet

 ..1. Size:119K  microsemi
 apt58m50j.pdf pdf_icon

APT58M50J

APT58M50J 500V, 58A, 0.065 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon g... See More ⇒

 0.1. Size:108K  microsemi
 apt58m50jcu3.pdf pdf_icon

APT58M50J

APT58M50JCU3 VDSS = 500V ISOTOP Buck chopper RDSon = 65m Max @ Tj = 25 C MOSFET + SiC chopper diode ID = 58A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schottky D... See More ⇒

 0.2. Size:108K  microsemi
 apt58m50jcu2.pdf pdf_icon

APT58M50J

APT58M50JCU2 VDSS = 500V ISOTOP Boost chopper RDSon = 65m Max @ Tj = 25 C MOSFET + SiC chopper diode ID = 58A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gate ch... See More ⇒

 8.1. Size:209K  microsemi
 apt58m80j.pdf pdf_icon

APT58M50J

APT58M80J 800V, 60A, 0.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒

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Detailed specifications: APT56F50L, APT56F60B2, APT56F60L, APT56M50B2, APT56M50L, APT56M60B2, APT56M60L, APT58F50J, IRF1010E, APT58M50JCU2, APT58M50JCU3, APT58M80J, APT5F100K, APT6010B2FLLG, APT6010B2LLG, APT6010LFLLG, APT6010LLLG

Keywords - APT58M50J MOSFET specs

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