APT8020B2FLLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT8020B2FLLG
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 694 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 1000 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
APT8020B2FLLG Datasheet (PDF)
apt8020b2fllg apt8020lfllg.pdf

APT8020B2FLLAPT8020LFLL800V 38A 0.220RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LFLLand Qg. Power MOS 7 combines lower conduction and switching los
apt8020b2fll.pdf

APT8020B2FLLAPT8020LFLL800V 38A 0.200WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona
apt8020b2ll.pdf

APT8020B2LLAPT8020LLL800V 38A 0.200WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi
apt8020b2llg apt8020lllg.pdf

APT8020B2LLAPT8020LLL800V 38A 0.200B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LLLand Qg. Power MOS 7 combines lower conduction and switching losses
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SM8205AO | TPC6004 | SMG2343P | IPB14N03LA | SI6433BDQ | STB30NM60N | IRC830-007
History: SM8205AO | TPC6004 | SMG2343P | IPB14N03LA | SI6433BDQ | STB30NM60N | IRC830-007



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
irf4115 | 2sc828 replacement | 2sd669 datasheet | c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent | кт817г характеристики