All MOSFET. APT8020B2FLLG Datasheet

 

APT8020B2FLLG Datasheet and Replacement


   Type Designator: APT8020B2FLLG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-247
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APT8020B2FLLG Datasheet (PDF)

 ..1. Size:251K  microsemi
apt8020b2fllg apt8020lfllg.pdf pdf_icon

APT8020B2FLLG

APT8020B2FLLAPT8020LFLL800V 38A 0.220RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LFLLand Qg. Power MOS 7 combines lower conduction and switching los

 2.1. Size:71K  apt
apt8020b2fll.pdf pdf_icon

APT8020B2FLLG

APT8020B2FLLAPT8020LFLL800V 38A 0.200WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 5.1. Size:69K  apt
apt8020b2ll.pdf pdf_icon

APT8020B2FLLG

APT8020B2LLAPT8020LLL800V 38A 0.200WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 5.2. Size:157K  apt
apt8020b2llg apt8020lllg.pdf pdf_icon

APT8020B2FLLG

APT8020B2LLAPT8020LLL800V 38A 0.200B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LLLand Qg. Power MOS 7 combines lower conduction and switching losses

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IPW60R280E6 | SVGP20110NSTR | 2N6791 | MXP4004AT | APTC60DAM18CTG | FRM234R | MEE42942-G

Keywords - APT8020B2FLLG MOSFET datasheet

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