MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT

BCR 521NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=1k, R2=1k)Type Marking Ordering Code Pin Configuration PackageBCR 521 XVs Q62702-C2355 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vol

BCR521NPN Silicon Digital Transistor Built in bias resistor (R1= 1 k, R2= 1 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR521 XVs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage VCBO

Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(

SUR521H Epitaxial planar NPN silicon transistorDescription Dual chip digital transistor Features Two SRC1207 chips in SOT-353 package Simplify circuit design Reduce a quantity of parts and manufacturing process Package : SOT-353 Ordering Information Type NO. Marking Package Code SUR521H SOT-353 2X : Year & Week Code Equivalent circuit &