R521 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR521LT1/D The RF Line PNP Silicon MMBR521LT1 High-Frequency Transistor MRF5211LT1 Designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC = 70 mA fT

BCR 521 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=1k , R2=1k ) Type Marking Ordering Code Pin Configuration Package BCR 521 XVs Q62702-C2355 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base vol

BCR521 NPN Silicon Digital Transistor Built in bias resistor (R1= 1 k , R2= 1 k ) 2 3 Pb-free (RoHS compliant) package 1 Qualified according AEC Q101 C 3 R1 R 2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR521 XVs SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage VCEO 50 Collector-base voltage VCBO

Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape packing and magazine packing (

SUR521H Epitaxial planar NPN silicon transistor Description Dual chip digital transistor Features Two SRC1207 chips in SOT-353 package Simplify circuit design Reduce a quantity of parts and manufacturing process Package SOT-353 Ordering Information Type NO. Marking Package Code SUR521H SOT-353 2X Year & Week Code Equivalent circuit &