RE1C001UN - аналоги, параметры транзистора - Справочник транзисторов

RE1C001UN даташит

..1. Size:590K rohm
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RE1C001UN Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V EMT3F (3) RDS(on) (Max.) 3.5W ID (1) 100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE

7.1. Size:399K rohm
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RE1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) EMT3F RDS(on) (Max.) 3.8W (1) ID -100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIO

8.1. Size:545K rohm
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RE1C002UN Nch 20V 200mA Small Signal MOSFET Datasheet lOutline VDSS 20V EMT3F (3) RDS(on) (Max.) 1.2W (1) ID 200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE

8.2. Size:481K rohm
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RE1C002ZP Pch -20V -200mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) EMT3F RDS(on) (Max.) 1.2W (1) ID -200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 ESD PROTECTION DIODE *2 BODY DIO

Другие MOSFET... SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , AON6414A , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE .