RF4E070GN - аналоги, параметры транзистора - Справочник транзисторов

RF4E070GN даташит

..1. Size:440K rohm
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RF4E070GN Nch 30V 7A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 21.4mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 30.0mW (3) (7) ID 7A (3) (2) PD (1) 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7)

7.1. Size:427K rohm
rf4e070bn.pdf pdf_icon

RF4E070BN Nch 30V 7A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 28.6mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 40.0mW (3) (7) ID 7A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7

8.1. Size:2907K rohm
rf4e075at.pdf pdf_icon

RF4E075AT Datasheet Pch -30V -7.5A Middle Power MOSFET lOutline l HUML2020L8 VDSS -30V RDS(on)(Max.) 21.7m ID 7.5A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant. 4) Hal

9.1. Size:440K rohm
rf4e080bn.pdf pdf_icon

RF4E080BN Nch 30V 8A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 17.6mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 24.6mW (3) (7) ID 8A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (