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SISA12ADN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SISA12ADN

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 3.5 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.2 V

Максимально допустимый постоянный ток стока (Id): 22 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 29.5 nC

Время нарастания (tr): 10 ns

Выходная емкость (Cd): 600 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0043 Ohm

Тип корпуса: 1212-8

Аналог (замена) для SISA12ADN

 

 

SISA12ADN Datasheet (PDF)

1.1. sisa12adn.pdf Size:577K _update-mosfet

SISA12ADN
SISA12ADN

New Product SiSA12ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)a, g Qg (Typ.) • 100 % Rg and UIS Tested 0.0043 at VGS = 10 V 25 • Material categorization: 30 13.6 nC 0.0060 at VGS = 4.5 V For definitions of compliance please see 25 www.vishay.com/doc?99912 PowerPAK®

4.1. sisa12dn.pdf Size:587K _update-mosfet

SISA12ADN
SISA12ADN

New Product SiSA12DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () (Max.) ID (A)a, g Qg (Typ.) Definition • TrenchFET® Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC • 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 • Compliant to RoHS Directive 2002/95/EC APPLICAT

 5.1. sisa18dn.pdf Size:577K _update-mosfet

SISA12ADN
SISA12ADN

New Product SiSA18DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) • 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 • Material categorization: 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8

5.2. sisa14dn.pdf Size:539K _update-mosfet

SISA12ADN
SISA12ADN

SiSA14DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) • 100 % Rg and UIS Tested 0.00510 at VGS = 10 V • Material categorization: 30 20 9.4 nC 0.00850 at VGS = 4.5 V For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8 APPLICATIONS D

 5.3. sisa18adn.pdf Size:566K _update-mosfet

SISA12ADN
SISA12ADN

New Product SiSA18ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) • 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 • Material categorization: 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8

5.4. sisa10dn.pdf Size:597K _update-mosfet

SISA12ADN
SISA12ADN

New Product SiSA10DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)a, g Qg (Typ.) • 100 % Rg and UIS Tested 0.0037 at VGS = 10 V 30 • Material categorization: 30 15.4 nC 0.0050 at VGS = 4.5 V For definitions of compliance please see 30 www.vishay.com/doc?99912 PowerPAK® 1212

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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