All MOSFET. SISA12ADN Datasheet

 

SISA12ADN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SISA12ADN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: 1212-8

 SISA12ADN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SISA12ADN Datasheet (PDF)

 ..1. Size:577K  vishay
 sisa12adn.pdf

SISA12ADN SISA12ADN

New ProductSiSA12ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0043 at VGS = 10 V 25 Material categorization:30 13.6 nC0.0060 at VGS = 4.5 V For definitions of compliance please see 25www.vishay.com/doc?99912PowerPAK

 8.1. Size:587K  vishay
 sisa12dn.pdf

SISA12ADN SISA12ADN

New ProductSiSA12DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.)Definition TrenchFET Gen IV Power MOSFET0.0043 at VGS = 10 V 2530 13.6 nC 100 % Rg and UIS Tested0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/ECAPPLICAT

 9.1. Size:539K  vishay
 sisa14dn.pdf

SISA12ADN SISA12ADN

SiSA14DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 100 % Rg and UIS Tested0.00510 at VGS = 10 V Material categorization:30 20 9.4 nC0.00850 at VGS = 4.5 V For definitions of compliance please seewww.vishay.com/doc?99912PowerPAK 1212-8APPLICATIONSD

 9.2. Size:577K  vishay
 sisa18dn.pdf

SISA12ADN SISA12ADN

New ProductSiSA18DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0075 at VGS = 10 V 38.3 Material categorization:30 6.9 nC0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please seewww.vishay.com/doc?99912PowerPAK 1212-8

 9.3. Size:597K  vishay
 sisa10dn.pdf

SISA12ADN SISA12ADN

New ProductSiSA10DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0037 at VGS = 10 V 30 Material categorization:30 15.4 nC0.0050 at VGS = 4.5 V For definitions of compliance please see30www.vishay.com/doc?99912PowerPAK 1212

 9.4. Size:566K  vishay
 sisa18adn.pdf

SISA12ADN SISA12ADN

New ProductSiSA18ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0075 at VGS = 10 V 38.3 Material categorization:30 6.9 nC0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please seewww.vishay.com/doc?99912PowerPAK 1212-8

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