SIZ902DT - параметры транзистора MOSFET, его аналоги, datasheet

SIZ902DT Datasheet (PDF)

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New ProductSiZ902DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.0120 at VGS = 10 V 16a 100 % Rg and UIS TestedChannel-1 30 6.8 nC0.0145 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC16aAPPL

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New ProductSiZ900DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.0072 at VGS = 10 V 24a 100 % Rg and UIS TestedChannel-1 30 13.5 nC0.0092 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC24aAPPLICATIO

9.2. Size:226K vishay
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New ProductSiZ904DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.024 at VGS = 10 V TrenchFET Power MOSFETs12aChannel-1 30 3.8 nC 100 % Rg and UIS Tested0.030 at VGS = 4.5 V 12a Compliant to RoHS Directive 2002/95/EC0.0135 at

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