EKI10126 - параметры транзистора MOSFET, его аналоги, datasheet

EKI10126 Datasheet (PDF)

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100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET EKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 66 A D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

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isc N-Channel MOSFET Transistor EKI10126FEATURESDrain Current I =66A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET EKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 47 A D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

8.2. Size:251K inchange semiconductor
eki10198.pdf pdf_icon

isc N-Channel MOSFET Transistor EKI10198FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo