Справочник MOSFET. DH100P30I

 

DH100P30I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DH100P30I
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 790 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.051 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для DH100P30I

   - подбор ⓘ MOSFET транзистора по параметрам

 

DH100P30I Datasheet (PDF)

 6.1. Size:1193K  china
dh100p30.pdfpdf_icon

DH100P30I

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 6.2. Size:1100K  cn wxdh
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdfpdf_icon

DH100P30I

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

 6.3. Size:1238K  cn wxdh
dh100p30d.pdfpdf_icon

DH100P30I

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package

 6.4. Size:1100K  cn wxdh
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdfpdf_icon

DH100P30I

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

Другие MOSFET... DG2N65-220F , DG2N65-126 , DG840 , DG840F , DH100P30 , DH100P30F , DH100P30B , DH100P30D , IRF640N , DH100P30E , F6B52HP , FP401 , FS2KM-12 , FS2KM-14A , FS2KM-16A , FS2KM-18A , FS2KMJ-3 .

History: 2N4856 | PHP79NQ08LT | SM3116NBU | RJK0358DPA | LSD65R180GT | 2SK1466 | BL9N20-D

 

 
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