DH100P30I Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH100P30I
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 790 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.051 Ohm
Тип корпуса: TO262
- подбор MOSFET транзистора по параметрам
DH100P30I Datasheet (PDF)
dh100p30.pdf

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
dh100p30d.pdf

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: UP9971G-S08-R | FDC654P | OSG55R074HSZF | PNMET20V06E | 2SK1501 | SGSP592 | SPD04N60C3
History: UP9971G-S08-R | FDC654P | OSG55R074HSZF | PNMET20V06E | 2SK1501 | SGSP592 | SPD04N60C3



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