FK6K02010L - аналоги, параметры транзистора - Справочник транзисторов

FK6K02010L даташит

..1. Size:349K panasonic
fk6k02010l.pdf pdf_icon

Doc No. TT4-EA-12566 Revision. 2 Product Standards MOS FET FK6K02010L FK6K02010L Silicon N-channel MOS FET Unit mm 2.0 For switching 0.2 0.13 6 5 4 Features Low drain-source On-state Resistance RDS(on)typ. = 13 m VGS = 4.5 V) Low drive voltage 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 3 0.7

6.1. Size:454K panasonic
fk6k0201.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC). FK6K0201 Silicon N-channel MOS FET For switch circuits Overview Package FK6K0201 is N-channel signal type MOS FET employed small size surface Code mounting package. WSMini6-F1-B Pin Name 1 Drain 4 Source Features 2 Drain 5 Drain Low drain-source ON resistance RDS(on) typ. = 13 mW (VGS =

9.1. Size:2553K panasonic
fk6k0612.pdf pdf_icon

Doc No. TT4-EA-14979 Revision. 1 Product Standards MOS FET FK6K06120L FK6K06120L Single N-channel MOS FET Package dimension Unit mm For lithium-ion secondary battery protection circuits For load switching 2.0 0.2 0.13 6 5 4 Features Low drain-source ON resistance RDS(on) typ. = 60 m (VGS = 4.5 V) Low drive voltage 2.5 V drive RoHS compliant (EU RoHS / UL-94

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