SWHA069R10VS - параметры транзистора MOSFET, его аналоги, datasheet

SWHA069R10VS Datasheet (PDF)

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SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V

..2. Size:747K samwin
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SW069R10VSN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9m)@VGS=4.5V18ID : 60ALow RDS(ON) (Typ 7m)@VGS=10V 2 763 RDS(ON) : 9m@VGS=4.5V Low Gate Charge (Typ 45nC)54 Improved dv/dt Capability 7m@VGS=10V 100% Avalanche Tested Application: Li Battery Protect Board,DSynchronous

..3. Size:708K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf pdf_icon

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A

6.1. Size:916K samwin
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SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS : 60V High ruggedness ID : 60A Low RDS(ON) (Typ 7.0m)@VGS=4.5V (Typ 6.0m)@VGS=10V RDS(ON) :7.0m@VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m@VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application