SWHA069R10VS - Даташиты. Аналоги. Основные параметры

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V

SW069R10VS N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9m )@VGS=4.5V 1 8 ID 60A Low RDS(ON) (Typ 7m )@VGS=10V 2 7 6 3 RDS(ON) 9m @VGS=4.5V Low Gate Charge (Typ 45nC) 5 4 Improved dv/dt Capability 7m @VGS=10V 100% Avalanche Tested Application Li Battery Protect Board, D Synchronous

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A

SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 7.0m )@VGS=4.5V (Typ 6.0m )@VGS=10V RDS(ON) 7.0m @VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m @VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application

SW069R06VT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 5.7m )@VGS=4.5V 1 8 2 7 (Typ 4.9m )@VGS=10V 6 RDS(ON) 5.7m @VGS=4.5V 3 Low Gate Charge (Typ 84nC) 5 4 Improved dv/dt Capability 4.9m @VGS=10V 100% Avalanche Tested D Application Electronic Ballast, Motor Control Inverter 4.G

SW065R03VLT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 30V High ruggedness Low RDS(ON) (Typ 9.7m )@VGS=4.5V 1 8 ID 58A (Typ 6.4m )@VGS=10V 2 7 RDS(ON) 9.7m @VGS=4.5V 6 Low Gate Charge (Typ 34nC) 3 5 Improved dv/dt Capability 4 6.4m @VGS=10V 100% Avalanche Tested Application Synchronous Rectification, D Li Battery Protect