NTR2101PT1G - параметры транзистора MOSFET, его аналоги, datasheet

NTR2101PT1G Datasheet (PDF)

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NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications High Side Load Switch

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NTR2101PT1Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)www.onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications79 mW @ -1.8 V High Side