NTR2101PT1G - описание и поиск аналогов

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch

NTR2101PT1G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications 79 mW @ -1.8 V High Side

Product specification NTR2101P Small Signal MOSFET V(BR)DSS RDS(on) Typ ID Max 39 mW @ -4.5 V -8.0 V, -3.7 A, Single P-Channel, SOT-23 -8.0 V 52 mW @ -2.5 V -3.7 A Features 79 mW @ -1.8 V Leading Trench Technology for Low RDS(on) P-Channel -1.8 V Rated for Low Voltage Gate Drive D SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free Device Applic