NTR2101PT1G Datasheet. Specs and Replacement
Type Designator: NTR2101PT1G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.75 nS
Cossⓘ - Output Capacitance: 289 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT-23
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NTR2101PT1G substitution
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NTR2101PT1G datasheet
ntr2101pt1g.pdf
NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch ... See More ⇒
ntr2101pt1g.pdf
NTR2101PT1G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒
ntr2101p-d.pdf
NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch ... See More ⇒
ntr2101p.pdf
NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications 79 mW @ -1.8 V High Side... See More ⇒
Detailed specifications: NTP8G202N, NTP8G206N, NTP90N02, NTQS6463R2, NTR0202PLT1, NTR1P02L, NTR1P02T1, NTR1P02T3, STP75NF75, NTR3161NT1G, NTR3162PT1G, NTR3A30PZ, NTR4003NT1G, NTR4101PT1G, NTR4170NT1G, NTR4171PT1G, NTR4501NT1
Keywords - NTR2101PT1G MOSFET specs
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