IRFS4510 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFS4510
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 140 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 61 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 58 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 220 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0139 Ohm
Тип корпуса: D2PAK TO-263
IRFS4510 Datasheet (PDF)
irfs4510pbf irfsl4510pbf.pdf
PD - 97771IRFS4510PbFIRFSL4510PbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.11.3ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 13.9ml Hard Switched and High Frequency CircuitsID (Silicon Limited)61ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl
irfs4510.pdf
Isc N-Channel MOSFET Transistor IRFS4510FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs450a.pdf
IRFS450AFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.6 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte
irfs450b.pdf
November 2001IRFS450B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 87 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast
irfs450a.pdf
isc N-Channel MOSFET Transistor IRFS450AFEATURESAvalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose appl
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
