Справочник MOSFET. DKI04077

 

DKI04077 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DKI04077
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.4 ns
   Cossⓘ - Выходная емкость: 255 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0089 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для DKI04077

 

 

DKI04077 Datasheet (PDF)

 ..1. Size:369K  sanken-ele
 dki04077.pdf

DKI04077 DKI04077

40 V, 47 A, 6.9 m Low RDS(ON) N ch Trench Power MOSFET DKI04077 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 8.9 m max. (VGS = 10 V, ID = 23.3 A) Qg ------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) Low Total Gat

 ..2. Size:266K  inchange semiconductor
 dki04077.pdf

DKI04077 DKI04077

isc N-Channel MOSFET Transistor DKI04077FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.1. Size:369K  sanken-ele
 dki04035.pdf

DKI04077 DKI04077

40 V, 48 A, 3.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04035 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 4.3 m max. (VGS = 10 V, ID = 51 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate

 8.2. Size:369K  sanken-ele
 dki04046.pdf

DKI04077 DKI04077

40 V, 48 A, 4.3 m Low RDS(ON) N ch Trench Power MOSFET DKI04046 Features Package TO-252 V(BR)DSS --------------------------------- 40 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 5.6 m max. (VGS = 10 V, ID = 35.4 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate

 8.3. Size:266K  inchange semiconductor
 dki04035.pdf

DKI04077 DKI04077

isc N-Channel MOSFET Transistor DKI04035FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.4. Size:266K  inchange semiconductor
 dki04046.pdf

DKI04077 DKI04077

isc N-Channel MOSFET Transistor DKI04046FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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